Large Language Models (LLMs) and transformer architectures have shown impressive reasoning and generation capabilities across diverse natural language tasks. However, their reliability and robustness in real-world engineering domains remain largely unexplored, limiting their practical utility in human-centric workflows. In this work, we investigate the applicability and consistency of LLMs for analog circuit design -- a task requiring domain-specific reasoning, adherence to physical constraints, and structured representations -- focusing on AI-assisted design where humans remain in the loop. We study how different data representations influence model behavior and compare smaller models (e.g., T5, GPT-2) with larger foundation models (e.g., Mistral-7B, GPT-oss-20B) under varying training conditions. Our results highlight key reliability challenges, including sensitivity to data format, instability in generated designs, and limited generalization to unseen circuit configurations. These findings provide early evidence on the limits and potential of LLMs as tools to enhance human capabilities in complex engineering tasks, offering insights into designing reliable, deployable foundation models for structured, real-world applications.

The growing demand for low-power and area-efficient TinyML inference on AIoT devices necessitates memory architectures that minimise data movement while sustaining high computational efficiency. This paper presents FERMI-ML, a Flexible and Resource-Efficient Memory-In-Situ (MIS) SRAM macro designed for TinyML acceleration. The proposed 9T XNOR-based RX9T bit-cell integrates a 5T storage cell with a 4T XNOR compute unit, enabling variable-precision MAC and CAM operations within the same array. A 22-transistor (C22T) compressor-tree-based accumulator facilitates logarithmic 1-64-bit MAC computation with reduced delay and power compared to conventional adder trees. The 4 KB macro achieves dual functionality for in-situ computation and CAM-based lookup operations, supporting Posit-4 or FP-4 precision. Post-layout results at 65 nm show operation at 350 MHz with 0.9 V, delivering a throughput of 1.93 TOPS and an energy efficiency of 364 TOPS/W, while maintaining a Quality-of-Result (QoR) above 97.5% with InceptionV4 and ResNet-18. FERMI-ML thus demonstrates a compact, reconfigurable, and energy-aware digital Memory-In-Situ macro capable of supporting mixed-precision TinyML workloads.

Utilizing the intrinsic history-dependence and nonlinearity of hardware, physical reservoir computing is a promising neuromorphic approach to encode time-series data for in-sensor computing. The accuracy of this encoding critically depends on the distinguishability of multi-state outputs, which is often limited by suboptimal and empirically chosen reservoir operation conditions. In this work, we demonstrate a machine learning approach, Bayesian optimization, to improve the encoding fidelity of solution-processed Al2O3/In2O3 thin-film transistors (TFTs). We show high-fidelity 6-bit temporal encoding by exploring five key pulse parameters and using the normalized degree of separation (nDoS) as the metric of output state separability. Additionally, we show that a model trained on simpler 4-bit data can effectively guide optimization of more complex 6-bit encoding tasks, reducing experimental cost. Specifically, for the encoding and reconstruction of binary-patterned images of a moving car across 6 sequential frames, we demonstrate that the encoding is more accurate when operating the TFT using optimized pulse parameters and the 4-bit optimized operating condition performs almost as well as the 6-bit optimized condition. Finally, interpretability analysis via Shapley Additive Explanations (SHAP) reveals that gate pulse amplitude and drain voltage are the most influential parameters in achieving higher state separation. This work presents the first systematic method to identify optimal operating conditions for reservoir devices, and the approach can be extended to other physical reservoir implementations across different material platforms.

Next to the flashy realm of AI, materials may seem quaint. These days, our lives revolve around the digital world. Money, culture, news, gossip - all of it lives there. Generative artificial intelligence is the biggest story in the world, but could you point to where that technology is physically located? The material world just isn't where the action is.

The humble inventions that power our modern world wouldn't have been possible without decades of support for early-stage research. In December 1947, three physicists at Bell Telephone Laboratories--John Bardeen, William Shockley, and Walter Brattain--built a compact electronic device using thin gold wires and a piece of germanium, a material known as a semiconductor. Their invention, later named the transistor (for which they were awarded the Nobel Prize in 1956), could amplify and switch electrical signals, marking a dramatic departure from the bulky and fragile vacuum tubes that had powered electronics until then. They were asking fundamental questions about how electrons behave in semiconductors, experimenting with surface states and electron mobility in germanium crystals. Over months of trial and refinement, they combined theoretical insights from quantum mechanics with hands-on experimentation in solid-state physics--work many might have dismissed as too basic, academic, or unprofitable. Their efforts culminated in a moment that now marks the dawn of the information age.

Analog subcircuit identification is a core task in analog design, essential for simulation, sizing, and layout. Traditional methods often require extensive human expertise, rule-based encoding, or large labeled datasets. To address these challenges, we propose GENIE-ASI, the first training-free, large language model (LLM)-based methodology for analog subcircuit identification. GENIE-ASI operates in two phases: it first uses in-context learning to derive natural language instructions from a few demonstration examples, then translates these into executable Python code to identify subcircuits in unseen SPICE netlists. In addition, to evaluate LLM-based approaches systematically, we introduce a new benchmark composed of operational amplifier netlists (op-amps) that cover a wide range of subcircuit variants. Experimental results on the proposed benchmark show that GENIE-ASI matches rule-based performance on simple structures (F1-score = 1.0), remains competitive on moderate abstractions (F1-score = 0.81), and shows potential even on complex subcircuits (F1-score = 0.31). These findings demonstrate that LLMs can serve as adaptable, general-purpose tools in analog design automation, opening new research directions for foundation model applications in analog design automation.

We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from electrical measurements, enabling automated parameter extraction and technology computer-aided design (TCAD) fitting. To facilitate this task, we implement a simple data augmentation and pre-training approach by training a secondary neural network to approximate a physics-based device simulator. This method enables high-quality fits after training the neural network on electrical data generated from physics-based simulations of ~500 devices, a factor >40$\times$ fewer than other recent efforts. Consequently, fitting can be achieved by training on physically rigorous TCAD models, including complex geometry, self-consistent transport, and electrostatic effects, and is not limited to computationally inexpensive compact models. We apply our approach to reverse-engineer key parameters from experimental monolayer WS$_2$ transistors, achieving a median coefficient of determination ($R^2$) = 0.99 when fitting measured electrical data. We also demonstrate that this approach generalizes and scales well by reverse-engineering electrical data on high-electron-mobility transistors while fitting 35 parameters simultaneously. To facilitate future research on deep learning approaches for inverse transistor design, we have published our code and sample data sets online.

Recent advances in neuromorphic computing demonstrate on-device learning capabilities with low power consumption. One of the key learning units in these systems is the winner-take-all circuit. In this research, we propose a winner-take-all circuit that can be configured to achieve k-winner and hysteresis properties, simulated in IBM 65 nm node. The circuit dissipated 34.9 $μ$W of power with a latency of 10.4 ns, while processing 1000 inputs. The utility of the circuit is demonstrated for spatial filtering and classification.

Analog In-Memory Compute (AIMC) can improve the energy efficiency of Deep Learning by orders of magnitude. Yet analog-domain device and circuit non-idealities -- within the analog ``Tiles'' performing Matrix-Vector Multiply (MVM) operations -- can degrade neural-network task accuracy. We quantify the impact of low-level distortions and noise, and develop a mathematical model for Multiply-ACcumulate (MAC) operations mapped to analog tiles. Instantaneous-current IR-drop (the most significant circuit non-ideality), and ADC quantization effects are fully captured by this model, which can predict MVM tile-outputs both rapidly and accurately, as compared to much slower rigorous circuit simulations. A statistical model of PCM read noise at nanosecond timescales is derived from -- and matched against -- experimental measurements. We integrate these (statistical) device and (deterministic) circuit effects into a PyTorch-based framework to assess the accuracy impact on the BERT and ALBERT Transformer networks. We show that hardware-aware fine-tuning using simple Gaussian noise provides resilience against ADC quantization and PCM read noise effects, but is less effective against IR-drop. This is because IR-drop -- although deterministic -- is non-linear, is changing significantly during the time-integration window, and is ultimately dependent on all the excitations being introduced in parallel into the analog tile. The apparent inability of simple Gaussian noise applied during training to properly prepare a DNN network for IR-drop during inference implies that more complex training approaches -- incorporating advances such as the Tile-circuit model introduced here -- will be critical for resilient deployment of large neural networks onto AIMC hardware.

Artificial intelligence (AI) techniques are transforming analog circuit design by automating device-level tuning and enabling system-level co-optimization. This paper integrates two approaches: (1) AI-assisted transistor sizing using Multi-Objective Bayesian Optimization (MOBO) for direct circuit parameter optimization, demonstrated on a linearly tunable transconductor; and (2) AI-integrated circuit transfer function modeling for system-level optimization in a keyword spotting (KWS) application, demonstrated by optimizing an analog bandpass filter within a machine learning training loop. The combined insights highlight how AI can improve analog performance, reduce design iteration effort, and jointly optimize analog components and application-level metrics.