mosfet
GENIE-ASI: Generative Instruction and Executable Code for Analog Subcircuit Identification
Pham, Phuoc, Venkitaraman, Arun, Hsieh, Chia-Yu, Bonetti, Andrea, Uhlich, Stefan, Leibl, Markus, Hofmann, Simon, Ohbuchi, Eisaku, Servadei, Lorenzo, Schlichtmann, Ulf, Wille, Robert
Analog subcircuit identification is a core task in analog design, essential for simulation, sizing, and layout. Traditional methods often require extensive human expertise, rule-based encoding, or large labeled datasets. To address these challenges, we propose GENIE-ASI, the first training-free, large language model (LLM)-based methodology for analog subcircuit identification. GENIE-ASI operates in two phases: it first uses in-context learning to derive natural language instructions from a few demonstration examples, then translates these into executable Python code to identify subcircuits in unseen SPICE netlists. In addition, to evaluate LLM-based approaches systematically, we introduce a new benchmark composed of operational amplifier netlists (op-amps) that cover a wide range of subcircuit variants. Experimental results on the proposed benchmark show that GENIE-ASI matches rule-based performance on simple structures (F1-score = 1.0), remains competitive on moderate abstractions (F1-score = 0.81), and shows potential even on complex subcircuits (F1-score = 0.31). These findings demonstrate that LLMs can serve as adaptable, general-purpose tools in analog design automation, opening new research directions for foundation model applications in analog design automation.
- Europe > Germany > Bavaria > Upper Bavaria > Munich (0.04)
- Europe > Switzerland (0.04)
- Asia > Japan (0.04)
Comparative analysis and evaluation of ageing forecasting methods for semiconductor devices in online health monitoring
Villalobos, Adrian, Barrutia, Iban, Pena-Alzola, Rafael, Dragicevic, Tomislav, Aizpurua, Jose I.
Semiconductor devices, especially MOSFETs (Metal-oxide-semiconductor field-effect transistor), are crucial in power electronics, but their reliability is affected by aging processes influenced by cycling and temperature. The primary aging mechanism in discrete semiconductors and power modules is the bond wire lift-off, caused by crack growth due to thermal fatigue. The process is empirically characterized by exponential growth and an abrupt end of life, making long-term aging forecasts challenging. This research presents a comprehensive comparative assessment of different forecasting methods for MOSFET failure forecasting applications. Classical tracking, statistical forecasting and Neural Network (NN) based forecasting models are implemented along with novel Temporal Fusion Transformers (TFTs). A comprehensive comparison is performed assessing their MOSFET ageing forecasting ability for different forecasting horizons. For short-term predictions, all algorithms result in acceptable results, with the best results produced by classical NN forecasting models at the expense of higher computations. For long-term forecasting, only the TFT is able to produce valid outcomes owing to the ability to integrate covariates from the expected future conditions. Additionally, TFT attention points identify key ageing turning points, which indicate new failure modes or accelerated ageing phases.
- North America > United States (0.14)
- North America > Trinidad and Tobago > Trinidad > Arima > Arima (0.06)
- Oceania > Australia (0.04)
- (3 more...)
- Semiconductors & Electronics (1.00)
- Health & Medicine > Consumer Health (1.00)
- Energy > Renewable (0.67)
- Education > Educational Setting > Online (0.46)
Portable, High-Frequency, and High-Voltage Control Circuits for Untethered Miniature Robots Driven by Dielectric Elastomer Actuators
Shao, Qi, Liu, Xin-Jun, Zhao, Huichan
In this work, we propose a high-voltage, high-frequency control circuit for the untethered applications of dielectric elastomer actuators (DEAs). The circuit board leverages low-voltage resistive components connected in series to control voltages of up to 1.8 kV within a compact size, suitable for frequencies ranging from 0 to 1 kHz. A single-channel control board weighs only 2.5 g. We tested the performance of the control circuit under different load conditions and power supplies. Based on this control circuit, along with a commercial miniature high-voltage power converter, we construct an untethered crawling robot driven by a cylindrical DEA. The 42-g untethered robots successfully obtained crawling locomotion on a bench and within a pipeline at a driving frequency of 15 Hz, while simultaneously transmitting real-time video data via an onboard camera and antenna. Our work provides a practical way to use low-voltage control electronics to achieve the untethered driving of DEAs, and therefore portable and wearable devices.
- Information Technology > Hardware (1.00)
- Information Technology > Artificial Intelligence > Robots (1.00)
A High-accuracy Calibration Method of Transient TSEPs for Power Semiconductor Devices
Zhang, Qinghao, Li, Wenrui, Zhang, Pinjia
The thermal sensitive electrical parameter (TSEP) method is crucial for enhancing the reliability of power devices through junction temperature monitoring. The TSEP method comprises three key processes: calibration, regression, and application. While significant efforts have been devoted to improving regression algorithms and increasing TSEP sensitivity to enhance junction temperature monitoring accuracy, these approaches have reached a bottleneck. In reality, the calibration method significantly influences monitoring accuracy, an aspect often overlooked in conventional TSEP methods. To address this issue, we propose a high-accuracy calibration method for transient TSEPs. First, a temperature compensation strategy based on thermal analysis is introduced to mitigate the temperature difference caused by load current during dual pulse tests. Second, the impact of stray parameters is analyzed to identify coupled parameters, which are typically neglected in existing methods. Third, it is observed that random errors follow a logarithm Gaussian distribution, covering a hidden variable. A neural network is used to obtain the junction temperature predictive model. The proposed calibration method is experimental validated in threshold voltage as an example. Compared with conventional calibration methods, the mean absolute error is reduced by over 30%. Moreover, this method does not require additional hardware cost and has good generalization.
- Asia > China > Beijing > Beijing (0.04)
- North America > United States > Kansas > Stafford County (0.04)
- North America > United States > Georgia > Fulton County > Atlanta (0.04)
- Asia > China > Sichuan Province > Chengdu (0.04)
- Research Report (0.64)
- Personal (0.46)
- Semiconductors & Electronics (1.00)
- Energy > Power Industry (0.48)
AnalogCoder: Analog Circuit Design via Training-Free Code Generation
Lai, Yao, Lee, Sungyoung, Chen, Guojin, Poddar, Souradip, Hu, Mengkang, Pan, David Z., Luo, Ping
Analog circuit design is a significant task in modern chip technology, focusing on the selection of component types, connectivity, and parameters to ensure proper circuit functionality. Despite advances made by Large Language Models (LLMs) in digital circuit design, the complexity and scarcity of data in analog circuitry pose significant challenges. To mitigate these issues, we introduce AnalogCoder, the first training-free LLM agent for designing analog circuits through Python code generation. Firstly, AnalogCoder incorporates a feedback-enhanced flow with tailored domain-specific prompts, enabling the automated and self-correcting design of analog circuits with a high success rate. Secondly, it proposes a circuit tool library to archive successful designs as reusable modular sub-circuits, simplifying composite circuit creation. Thirdly, extensive experiments on a benchmark designed to cover a wide range of analog circuit tasks show that AnalogCoder outperforms other LLM-based methods. It has successfully designed 20 circuits, 5 more than standard GPT-4o. We believe AnalogCoder can significantly improve the labor-intensive chip design process, enabling non-experts to design analog circuits efficiently.
- Asia > China > Hong Kong (0.04)
- North America > United States > Texas > Travis County > Austin (0.04)
- Asia > Japan > Honshū > Kansai > Hyogo Prefecture > Kobe (0.04)
Large Language Model (LLM) for Standard Cell Layout Design Optimization
Standard cells are essential components of modern digital circuit designs. With process technologies advancing toward 2nm, more routability issues have arisen due to the decreasing number of routing tracks, increasing number and complexity of design rules, and strict patterning rules. The state-of-the-art standard cell design automation framework is able to automatically design standard cell layouts in advanced nodes, but it is still struggling to generate highly competitive Performance-Power-Area (PPA) and routable cell layouts for complex sequential cell designs. Consequently, a novel and efficient methodology incorporating the expertise of experienced human designers to incrementally optimize the PPA of cell layouts is highly necessary and essential. High-quality device clustering, with consideration of netlist topology, diffusion sharing/break and routability in the layouts, can reduce complexity and assist in finding highly competitive PPA, and routable layouts faster. In this paper, we leverage the natural language and reasoning ability of Large Language Model (LLM) to generate high-quality cluster constraints incrementally to optimize the cell layout PPA and debug the routability with ReAct prompting. On a benchmark of sequential standard cells in 2nm, we demonstrate that the proposed method not only achieves up to 19.4% smaller cell area, but also generates 23.5% more LVS/DRC clean cell layouts than previous work. In summary, the proposed method not only successfully reduces cell area by 4.65% on average, but also is able to fix routability in the cell layout designs.
- North America > United States > Texas > Travis County > Austin (0.04)
- North America > United States > California > Santa Clara County > Santa Clara (0.04)
Smallest DFN MOSFETs in the world!
Semiconductor manufacturer, Nexperia has announced the release of a new range of 20 V & 30 V MOSFETs (metal–oxide–semiconductor field-effect transistors) in the world's smallest DFN (dual-flat no-leads) package, the DFN0603. Nexperia already offers ESD (electrostatic discharge) protection devices in this package, but has now succeeded in bringing it to their MOSFET portfolio, a feat as yet unmatched in the industry. Next generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for product designers. Firstly, available board space is at a premium as functionality is added, plus heat dissipation becomes a problem as power consumption increases. Nexperia has drawn on its decades of experience as an industry leader in the production of discrete components and designed this innovative range of tiny MOSFETs to successfully overcome both concerns.
Toward more energy efficient power converters
Wide bandgap devices, such as silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFET), are a critical element for making converters faster and more sustainable. This is because of their larger switching frequencies with smaller energy losses under a wide range of temperatures when compared with conventional silicon-based devices. However, calculating the parameters that determine how the electrical current in a MOSFET responds as a function of the applied voltage remains difficult in a circuit simulation. A better approach for fitting experimental data to extract the important parameters would provide chip manufacturers the ability to design more efficient power converters. Now, a team of scientists led by NAIST has successfully used the mathematical method called automatic differentiation (AD) to significantly accelerate these calculations.
Pulse-Firing Neural Chips for Hundreds of Neurons
Brownlow, Michael, Tarassenko, Lionel, Murray, Alan F., Hamilton, Alister, Han, Il Song, Reekie, H. Martin
U niv. of Edinburgh ABSTRACT We announce new CMOS synapse circuits using only three and four MOSFETsisynapse. Neural states are asynchronous pulse streams, upon which arithmetic is performed directly. Chips implementing over 100 fully programmable synapses are described and projections to networks of hundreds of neurons are made. 1 OVERVIEW OF PULSE FIRING NEURAL VLSI The inspiration for the use of pulse firing in silicon neural networks is clearly the electrical/chemical pulse mechanism in "real" biological neurons. Neurons fire voltage pulses of a frequency determined by their level of activity but of a constant magnitude (usually 5 Volts) [Murray,1989a]. As indicated in Figure 1, synapses perform arithmetic directly on these asynchronous pulses, to increment or decrement the receiving neuron's activity.
- Europe > United Kingdom (0.15)
- North America > United States > Oregon > Multnomah County > Portland (0.04)
A Self-Learning Neural Network
We propose a new neural network structure that is compatible with silicon technology and has built-in learning capability. The thrust of this network work is a new synapse function. The synapses have the feature that the learning parameter is embodied in the thresholds of MOSFET devices and is local in character. The network is shown to be capable of learning by example as well as exhibiting the desirable features of the Hopfield type networks. The thrust of what we want to discuss is a new synapse function for an artificial neuron to be used in a neural network.
- North America > United States > New York (0.05)
- North America > United States > California > San Diego County > San Diego (0.04)