The efficacy of Artificial Intelligence (AI) in micro/nano manufacturing is fundamentally constrained by the scarcity of high-quality and physically grounded training data for defect inspection. Lithography defect data from semiconductor industry are rarely accessible for research use, resulting in a shortage of publicly available datasets. To address this bottleneck in lithography, this study proposes a novel methodology for generating large-scale, physically valid defect datasets with pixel-level annotations. The framework begins with the ab initio synthesis of defect layouts using controllable, physics-constrained mathematical morphology operations (erosion and dilation) applied to the original design-level layout. These synthesized layouts, together with their defect-free counterparts, are fabricated into physical samples via high-fidelity digital micromirror device (DMD)-based lithography. Optical micrographs of the synthesized defect samples and their defect-free references are then compared to create consistent defect delineation annotations. Using this methodology, we constructed a comprehensive dataset of 3,530 Optical micrographs containing 13,365 annotated defect instances including four classes: bridge, burr, pinch, and contamination. Each defect instance is annotated with a pixel-accurate segmentation mask, preserving full contour and geometry. The segmentation-based Mask R-CNN achieves AP@0.5 of 0.980, 0.965, and 0.971, compared with 0.740, 0.719, and 0.717 for Faster R-CNN on bridge, burr, and pinch classes, representing a mean AP@0.5 improvement of approximately 34%. For the contamination class, Mask R-CNN achieves an AP@0.5 roughly 42% higher than Faster R-CNN. These consistent gains demonstrate that our proposed methodology to generate defect datasets with pixel-level annotations is feasible for robust AI-based Measurement/Inspection (MI) in semiconductor fabrication.

Inverse design optimization aims to infer system parameters from observed solutions, posing critical challenges across domains such as semiconductor manufacturing, structural engineering, materials science, and fluid dynamics. The lack of explicit mathematical representations in many systems complicates this process and makes the first order optimization impossible. Mainstream approaches, including generative AI and Bayesian optimization, address these challenges but have limitations. Generative AI is computationally expensive, while Bayesian optimization, relying on surrogate models, suffers from scalability, sensitivity to priors, and noise issues, often leading to suboptimal solutions. This paper introduces Deep Physics Prior (DPP), a novel method enabling first-order gradient-based inverse optimization with surrogate machine learning models. By leveraging pretrained auxiliary Neural Operators, DPP enforces prior distribution constraints to ensure robust and meaningful solutions. This approach is particularly effective when prior data and observation distributions are unknown.

Recent decades have witnessed remarkable advancements in artificial intelligence (AI), including large language models (LLMs), image and video generative models, and embodied AI systems. These advancements have led to an explosive increase in the demand for computational power, challenging the limits of Moore's Law. Optical lithography, a critical technology in semiconductor manufacturing, faces significant challenges due to its high costs. To address this, various lithography simulators have been developed. However, many of these simulators are limited by their inadequate photoresist modeling capabilities. This paper presents TorchResist, an open-source, differentiable photoresist simulator.TorchResist employs an analytical approach to model the photoresist process, functioning as a white-box system with at most twenty interpretable parameters. Leveraging modern differentiable programming techniques and parallel computing on GPUs, TorchResist enables seamless co-optimization with other tools across multiple related tasks. Our experimental results demonstrate that TorchResist achieves superior accuracy and efficiency compared to existing solutions. The source code is publicly available.

In the realm of lithography, Optical Proximity Correction (OPC) is a crucial resolution enhancement technique that optimizes the transmission function of photomasks on a pixel-based to effectively counter Optical Proximity Effects (OPE). However, conventional pixel-based OPC methods often generate patterns that pose manufacturing challenges, thereby leading to the increased cost in practical scenarios. This paper presents a novel inverse lithographic approach to OPC, employing a model-driven, block stacking deep learning framework that expedites the generation of masks conducive to manufacturing. This method is founded on vector lithography modelling and streamlines the training process by eliminating the requirement for extensive labeled datasets. Furthermore, diversity of mask patterns is enhanced by employing a wave function collapse algorithm, which facilitates the random generation of a multitude of target patterns, therefore significantly expanding the range of mask paradigm. Numerical experiments have substantiated the efficacy of the proposed end-to-end approach, highlighting its superior capability to manage mask complexity within the context of advanced OPC lithography. This advancement is anticipated to enhance the feasibility and economic viability of OPC technology within actual manufacturing environments.

Advancements in chip design and manufacturing have enabled the processing of complex tasks such as deep learning and natural language processing, paving the way for the development of artificial general intelligence (AGI). AI, on the other hand, can be leveraged to innovate and streamline semiconductor technology from planning and implementation to manufacturing. In this paper, we present \textit{Intelligent OPC Engineer Assistant}, an AI/LLM-powered methodology designed to solve the core manufacturing-aware optimization problem known as optical proximity correction (OPC). The methodology involves a reinforcement learning-based OPC recipe search and a customized multi-modal agent system for recipe summarization. Experiments demonstrate that our methodology can efficiently build OPC recipes on various chip designs with specially handled design topologies, a task that typically requires the full-time effort of OPC engineers with years of experience.

It is easy to overlook the role lithography plays in developing digital technologies. Every year, new and more advanced integrated circuits appear, pushing computing capabilities to more advanced levels. Typically, the focus is on what these devices can do, in areas like supercomputing, artificial intelligence (AI), and wireless communications, for example. Yet, behind the curtain is the technology that makes all of this possible. Lithography--which at its most basic level refers to a photography-like process that uses light to imprint images on a suitable substrate, such as a thin film--is at the foundation of modern computing and electronics.

We introduce neural lithography to address the 'design-to-manufacturing' gap in computational optics. Computational optics with large design degrees of freedom enable advanced functionalities and performance beyond traditional optics. However, the existing design approaches often overlook the numerical modeling of the manufacturing process, which can result in significant performance deviation between the design and the fabricated optics. To bridge this gap, we, for the first time, propose a fully differentiable design framework that integrates a pre-trained photolithography simulator into the model-based optical design loop. Leveraging a blend of physics-informed modeling and data-driven training using experimentally collected datasets, our photolithography simulator serves as a regularizer on fabrication feasibility during design, compensating for structure discrepancies introduced in the lithography process. We demonstrate the effectiveness of our approach through two typical tasks in computational optics, where we design and fabricate a holographic optical element (HOE) and a multi-level diffractive lens (MDL) using a two-photon lithography system, showcasing improved optical performance on the task-specific metrics.

Multiple patterning lithography (MPL) is regarded as one of the most promising ways of overcoming the resolution limitations of conventional optical lithography due to the delay of next-generation lithography technology. As the feature size continues to decrease, layout decomposition for multiple patterning lithography (MPLD) technology is becoming increasingly crucial for improving the manufacturability in advanced nodes. The decomposition process refers to assigning the layout features to different mask layers according to the design rules and density requirements. When the number of masks $k \geq 3$, the MPLD problems are NP-hard and thus may suffer from runtime overhead for practical designs. However, the number of layout patterns is increasing exponentially in industrial layouts, which hinders the runtime performance of MPLD models. In this research, we substitute the CPU's dance link data structure with parallel GPU matrix operations to accelerate the solution for exact cover-based MPLD algorithms. Experimental results demonstrate that our system is capable of full-scale, lightning-fast layout decomposition, which can achieve more than 10$\times$ speed-up without quality degradation compared to state-of-the-art layout decomposition methods.

Fast production of large area patterns with nanometre resolution is crucial for the established semiconductor industry and for enabling industrial-scale production of next-generation quantum devices. Metastable atom lithography with binary holography masks has been suggested as a higher resolution/low-cost alternative to the current state of the art: extreme ultraviolet (EUV) lithography. However, it was recently shown that the interaction of the metastable atoms with the mask material (SiN) leads to a strong perturbation of the wavefront, not included in existing mask generation theory, which is based on classical scalar waves. This means that the inverse problem (creating a mask based on the desired pattern) cannot be solved analytically even in 1D. Here we present a machine learning approach to mask generation targeted for metastable atoms. Our algorithm uses a combination of genetic optimisation and deep learning to obtain the mask. A novel deep neural architecture is trained to produce an initial approximation of the mask. This approximation is then used to generate the initial population of the genetic optimisation algorithm that can converge to arbitrary precision. We demonstrate the generation of arbitrary 1D patterns for system dimensions within the Fraunhofer approximation limit.

Nano-optic imagers that modulate light at sub-wavelength scales could enable new applications in diverse domains ranging from robotics to medicine. Although metasurface optics offer a path to such ultra-small imagers, existing methods have achieved image quality far worse than bulky refractive alternatives, fundamentally limited by aberrations at large apertures and low f-numbers. In this work, we close this performance gap by introducing a neural nano-optics imager. We devise a fully differentiable learning framework that learns a metasurface physical structure in conjunction with a neural feature-based image reconstruction algorithm. Experimentally validating the proposed method, we achieve an order of magnitude lower reconstruction error than existing approaches. As such, we present a high-quality, nano-optic imager that combines the widest field-of-view for full-color metasurface operation while simultaneously achieving the largest demonstrated aperture of 0.5 mm at an f-number of 2. While meta-optics have the potential to dramatically miniaturize camera technology, the quality of the captured images remains poor. Co-designing a single meta-optic and software correction, here the authors report on full-color imaging with quality comparable to commercial cameras.