Emerging Memories And Artificial Intelligence

On August 29, 2019 I put on a workshop on Emerging Memories and Artificial Intelligence at Stanford University put on by the Stanford Center for Magnetic Nanotechnology and Coughlin Associates. We had several interesting speakers talking about various types of artificial intelligence and the role that new non-volatile memories will play in both training AI models and implementing them in the field using inference engines. This piece will talk about some of the material presented at this workshop. Dr. Shan Wang, co-organizer of the event gave a introduction, talking about emerging non-volatile memories and in particular on Magnetic Random Access Memory (MRAM). He spoke about how various new memories work--in particular Resistive RAM (RRAM), Phase Change Memory (PCM), MRAM and Ferrroelectic RAM (FRAM).