STT MRAM for Artificial Intelligence Applications

High Performance, Nonvolatile, Unlimited Endurance… Memory Element: MTJ (Magnetic Tunnel Junction) Information stored by magnetic polarization (nonvolatile) instead of charge MTJ bit state "1" (high resistance) and "0" (low resistance) is written by Spin Transfer Torque with a (polarized) current across MTJ Extremely Fast (as LL Cache/DRAM) Nonvolatile (Persistent) Unlimited endurance ( 1014) High Density (1T per cell) Scalable to 0x nm STT-MRAM cell: 1T MTJ 4 5. Avalanche Technology at Semicon Taiwan 2020 Stand Alone Applications STT-MRAM Broad Applications STT- MRAM Embedded Applications Unified eNVM (Flash like) eFlash, eOTP, eFuse LL Cache Memory (SRAM like) L3, eDRAM Slow SRAM (New Market Applications) (AI, IoT…) One single chip for both embedded storage and working memory nvSRAM market Memory buffers Persistent DRAM DRAM* New Market Applications* Storage Class Memory *with 3D stack MRAM High speed Unlimited endurance Low power consumption Low manufacturing cost Extended Temperature (150 oC) Y. Huai, Flash Summit 2015, Santa Clara, California, August 12, 2015.