LithoBench consists of more than 120k tiles that are cropped from real circuit designs or synthesized according to topologies of widely adopted IL T testcases.

Graph Neural Networks (GNNs) have achieved remarkable performance in a wide range of graph-related learning tasks. However, explaining their predictions remains a challenging problem, especially due to the mismatch between the graphs used during training and those encountered during explanation. Most existing methods optimize soft edge masks on weighted graphs to highlight important substructures, but these graphs differ from the unweighted graphs on which GNNs are trained. This distributional shift leads to unreliable gradients and degraded explanation quality, especially when generating small, sparse subgraphs. To address this issue, we propose a novel iterative explanation framework which improves explanation robustness by aligning the model's training data distribution with the weighted graph distribution appeared during explanation. Our method alternates between two phases: explanation subgraph identification and model adaptation. It begins with a relatively large explanation subgraph where soft mask optimization is reliable. Based on this subgraph, we assign importance-aware edge weights to explanatory and non-explanatory edges, and retrain the GNN on these weighted graphs. This process is repeated with progressively smaller subgraphs, forming an iterative refinement procedure. We evaluate our method on multiple benchmark datasets using different GNN backbones and explanation methods. Experimental results show that our method consistently improves explanation quality and can be flexibly integrated with different architectures.

Optical proximity correction (OPC) is crucial for pushing the boundaries of semiconductor manufacturing and enabling the continued scaling of integrated circuits. While pixel-based OPC, termed as inverse lithography technology (ILT), has gained research interest due to its flexibility and precision. Its complexity and intricate features can lead to challenges in mask writing, increased defects, and higher costs, hence hindering widespread industrial adoption. In this paper, we propose DiffOPC, a differentiable OPC framework that enjoys the virtue of both edge-based OPC and ILT. By employing a mask rule-aware gradient-based optimization approach, DiffOPC efficiently guides mask edge segment movement during mask optimization, minimizing wafer error by propagating true gradients from the cost function back to the mask edges. Our approach achieves lower edge placement error while reducing manufacturing cost by half compared to state-of-the-art OPC techniques, bridging the gap between the high accuracy of pixel-based OPC and the practicality required for industrial adoption, thus offering a promising solution for advanced semiconductor manufacturing.

Lithography, transferring chip design masks to the silicon wafer, is the most important phase in modern semiconductor manufacturing flow. Due to the limitations of lithography systems, Extensive design optimizations are required to tackle the design and silicon mismatch. Inverse lithography technology (ILT) is one of the promising solutions to perform pre-fabrication optimization, termed mask optimization. Because of mask optimization problems' constrained non-convexity, numerical ILT solvers rely heavily on good initialization to avoid getting stuck on sub-optimal solutions. Machine learning (ML) techniques are hence proposed to generate mask initialization for ILT solvers with one-shot inference, targeting faster and better convergence during ILT. This paper addresses the question of \textit{whether ML models can directly generate high-quality optimized masks without engaging ILT solvers in the loop}. We propose an implicit learning ILT framework: ILILT, which leverages the implicit layer learning method and lithography-conditioned inputs to ground the model. Trained to understand the ILT optimization procedure, ILILT can outperform the state-of-the-art machine learning solutions, significantly improving efficiency and quality.

Multiple patterning lithography (MPL) is regarded as one of the most promising ways of overcoming the resolution limitations of conventional optical lithography due to the delay of next-generation lithography technology. As the feature size continues to decrease, layout decomposition for multiple patterning lithography (MPLD) technology is becoming increasingly crucial for improving the manufacturability in advanced nodes. The decomposition process refers to assigning the layout features to different mask layers according to the design rules and density requirements. When the number of masks $k \geq 3$, the MPLD problems are NP-hard and thus may suffer from runtime overhead for practical designs. However, the number of layout patterns is increasing exponentially in industrial layouts, which hinders the runtime performance of MPLD models. In this research, we substitute the CPU's dance link data structure with parallel GPU matrix operations to accelerate the solution for exact cover-based MPLD algorithms. Experimental results demonstrate that our system is capable of full-scale, lightning-fast layout decomposition, which can achieve more than 10$\times$ speed-up without quality degradation compared to state-of-the-art layout decomposition methods.

With the feature size continuously shrinking in advanced technology nodes, mask optimization is increasingly crucial in the conventional design flow, accompanied by an explosive growth in prohibitive computational overhead in optical proximity correction (OPC) methods. Recently, inverse lithography technique (ILT) has drawn significant attention and is becoming prevalent in emerging OPC solutions. However, ILT methods are either time-consuming or in weak performance of mask printability and manufacturability. In this paper, we present DevelSet, a GPU and deep neural network (DNN) accelerated level set OPC framework for metal layer. We first improve the conventional level set-based ILT algorithm by introducing the curvature term to reduce mask complexity and applying GPU acceleration to overcome computational bottlenecks. To further enhance printability and fast iterative convergence, we propose a novel deep neural network delicately designed with level set intrinsic principles to facilitate the joint optimization of DNN and GPU accelerated level set optimizer. Experimental results show that DevelSet framework surpasses the state-of-the-art methods in printability and boost the runtime performance achieving instant level (around 1 second).

Machine learning techniques have been extensively studied for mask optimization problems, aiming at better mask printability, shorter turnaround time, better mask manufacturability, and so on. However, most of these researches are focusing on the initial solution generation of small design regions. To further realize the potential of machine learning techniques on mask optimization tasks, we present a Convolutional Fourier Neural Operator (CFNO) that can efficiently learn layout tile dependencies and hence promise stitch-less large-scale mask optimization with the limited intervention of legacy tools. We discover the possibility of litho-guided self-training (LGST) through a trained machine learning model when solving non-convex optimization problems, which allows iterative model and dataset update and brings significant model performance improvement. Experimental results show that, for the first time, our machine learning-based framework outperforms state-of-the-art academic numerical mask optimizers with an order of magnitude speedup.

Abstract-- VLSI mask optimization is one of the most critical stages in manufacturability aware design, which is costly due to the complicated mask optimization and lithography simulation. Recent researches have shown prominent advantages of machine learning techniques dealing with complicated and big data problems, which bring potential of dedicated machine learning solution for DFM problems and facilitate the VLSI design cycle. In this paper, we focus on a heterogeneous OPC framework that assists mask layout optimization. Preliminary results show the efficiency and effectiveness of proposed frameworks that have the potential to be alternatives to existing EDA solutions. I Introduction VLSI mask optimization is one of the most critical stages in manufacturability aware design, which is costly due to the complicated mask optimization and lithography simulation. Recent studies have shown prominent advantages of machine learning techniques dealing with complicated and big data problems, which bring the potential of dedicated machine learning solution for DFM problems and facilitate the VLSI design cycle [1, 2].