Samsung Electronics Co. will release a new generation of memory chips in late 2021, its first in seven years, that promises to double speeds and offer the biggest capacity yet to keep pace with the growth of data centers and artificial intelligence demands. The world's largest memory chipmaker said it developed 512GB DDR5 (Double Data Rate 5) memory modules based on a High-K Metal Gate (HKMG) fabrication process that's traditionally been used in logic chips. DDR5 memory will be twice as fast as the current DDR4 while reducing leakage and using about 13% less power, the company wrote in its announcement. Samsung expects the transition to DDR5 to begin in the second half of this year. The chip industry has been anticipating the adoption of the new memory standard and support for it will arrive with Intel Corp.'s upcoming Xeon Scalable processors, codenamed Sapphire Rapids.