Neural Modulation for Flash Memory: An Unsupervised Learning Framework for Improved Reliability

Recent years have witnessed a significant increase in the storage density of NAND flash memory, making it a critical component in modern electronic devices. However, with the rise in storage capacity comes an increased likelihood of errors in data storage and retrieval. The growing number of errors poses ongoing challenges for system designers and engineers, in terms of the characterization, modeling, and optimization of NAND-based systems. We present a novel approach for modeling and preventing errors by utilizing the capabilities of generative and unsupervised machine learning methods. As part of our research, we constructed and trained a neural modulator that translates information bits into programming operations on each memory cell in NAND devices.